Power devices incorporate a lightly doped drift region that supports high blocking voltages. However, a thicker or more lightly doped drift region increases the on-state resistance ( Roncap R sub o n end-sub
use a vertical structure where gate voltage modulates a channel to control majority carrier flow, offering high switching speeds but higher on-resistance at high voltages. Power devices incorporate a lightly doped drift region
However, WBG devices introduce new reliability challenges: enhanced sensitivity to gate oxide defects (for SiC MOSFETs), current collapse (for GaN HEMTs), and more complex failure modes under fast transients. current collapse (for GaN HEMTs)
), creating a fundamental trade-off between voltage rating and conduction loss. Power devices incorporate a lightly doped drift region
Devices are primarily operated in (fully on or fully off) to maximize efficiency.